BSC105N10LSFGATMA1
- Mfr.Part #
- BSC105N10LSFGATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- 8-PowerTDFN
- Datasheet
-
BSC105N10LSFGATMA1
- Description
- MOSFET N-CH 100V 11.4/90A 8TDSON
- Stock
- 35000
- Quality
-
- Social media
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A (Ta), 90A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 156W (Tc)
- Product Status :
- Last Time Buy
- Rds On (Max) @ Id, Vgs :
- 10.5mOhm @ 50A, 10V
- Supplier Device Package :
- PG-TDSON-8-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.4V @ 110µA
- Datasheets
- BSC105N10LSFGATMA1
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| Express Delivery | Global delivery 3-5 working days. |  |  |
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